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JFET Junction Field Effect Transistor - PowerPoint PPT Presentation

JFET Junction Field Effect Transistor

Jfet (junction field effect transistor) unipolar device (one polarity ... source and drain are interchangeable in most. low-frequency applications. gate. drain ... – powerpoint ppt presentation.

• Unipolar device (one polarity of charge carrier)
• Voltage controlled (gate voltage controls
• drain current)
• High input impedance (?109-1012 ?)
• No minority carrier storage
• Source and drain are interchangeable in most
• low-frequency applications

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Field Effect Transistors

Published by Ashley Welch Modified over 8 years ago

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Presentation on theme: "Field Effect Transistors"— Presentation transcript:

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JFET. Bollen. JFET Overview JFET vs BJT Physical structure Working Input parameters DC formula Output parameters Transconductance Ac parameters Simulatioin parameters micro cap. JFET Fixed bias Self bias Voltage divider bias MOSTFET Component DC ac. AGENDA. Bollen. FET =

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• overview jfet
• variable resistor
• jfet input parameters
• same effect

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JFET Bollen

JFET Overview JFET vs BJT Physical structure Working Input parameters DC formula Output parameters Transconductance Ac parameters Simulatioin parameters micro cap JFET Fixed bias Self bias Voltage divider bias MOSTFET Component DC ac AGENDA Bollen

FET = Field Effect Transistor N-channel or P-channel J-FET Bollen

J-FET, OVERVIEW Bollen

JFET vs BJT Bollen

J-FET vs BJT Bollen

Physical structure There is one PN junction from gate to channel used in REVERSE Bollen

JFET working Bollen

Vp and Idss In data sheet p = pinch-off dss = drain source shorted or saturated = maximum current JFET input parameters Bollen

JFET DC formula Solve with abc formula Bollen

JFET Output parameters Uds < Up = ohmic region, Uds > Up = saturated region Bollen

JFET JFET is not often used in the ohmic (triode) region If so it is used as an variable resistor Bollen

JFET output Bollen

JFET transconductance Bollen

JFET ac parameters Bollen

JFET simulation parameters micro cap VTO Threshold voltage BETA Transconductance parameter Bollen

JFET fixed bias Steady Ugs, no variation possible, so we make the same effect with resistors. U = I . R Now we can vary around the bias point Bollen

JFET self bias Ug = 0 volt, NO gate current Ugs = Ug – Us = 0 – Ids.Rs Rin = 1 Meg Ohm Bollen

JFET self bias Varying Rs = varying the Q-point = operating point Bollen

Ug  0 volt Ugs = Ug – Us = Vg – Ids.Rs, bias is made at GATE and SOURCE JFET voltage divider bias Bollen

Metal Oxide Silicium Field Effect Transistor MOSFET Bollen

MOSFET Bollen

MOSFET dc Bollen

MOSFET ac Bollen

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